IntelliEPI Inc. (Cayman)

Research IntelliEPI Inc. (Cayman) (4971.TWO) on Bullrun: market cap TWD 23.17B, P/E 106.3, dividend yield 0.2%. Explore financials, valuation history, model signals, and stock context.

Key Metrics

Valuation Snapshot

latest market cap is TWD 23.17B; P/E is 106.3; dividend yield is 0.2%.

Peer valuation comparison

Latest P/E is 106.28x versus a Technology sector median of 24.16x (339.9% above).

Latest dividend yield is 0.18% versus a Technology sector median of 2.02% (91.1% below).

Valuation history

YearSnapshot dateMarket capP/EDividend yieldAnnual dividend/share
20262026-10-18TWD 23.17B106.30.2%0.85

Dividend history

Latest trailing dividend snapshot: annual dividend/share 0.85 TWD, yield 0.2%.

About IntelliEPI Inc. (Cayman)

IntelliEPI Inc. (Cayman), together with its subsidiaries, produces and sells epitaxy wafers of compound semiconductor for use in wireless communications, data transmission and national defense in the United States, Germany, Korea, Japan, China, and internationally. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacture of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates.

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Frequently asked questions

What is IntelliEPI Inc. (Cayman)'s market cap?

IntelliEPI Inc. (Cayman)'s market capitalization is TWD 23.17B.

What is IntelliEPI Inc. (Cayman)'s P/E ratio?

IntelliEPI Inc. (Cayman)'s price-to-earnings (P/E) ratio is 106.3.

Does IntelliEPI Inc. (Cayman) pay a dividend?

IntelliEPI Inc. (Cayman) has a dividend yield of 0.2%.

What does IntelliEPI Inc. (Cayman) do?

IntelliEPI Inc. (Cayman), together with its subsidiaries, produces and sells epitaxy wafers of compound semiconductor for use in wireless communications, data transmission and national defense in the United States, Germany, Korea, Japan, China, and internationally. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacture of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates.