Visual Photonics Epitaxy Co., Ltd.

Research Visual Photonics Epitaxy Co., Ltd. (2455.TW) on Bullrun: market cap TWD 91.16B, P/E 121.7, dividend yield 0.5%. Explore financials, valuation history, model signals, and stock context.

Key Metrics

Valuation Snapshot

latest market cap is TWD 91.16B; P/E is 121.7; dividend yield is 0.5%.

Peer valuation comparison

Latest P/E is 121.73x versus a Technology sector median of 24.16x (403.9% above).

Latest dividend yield is 0.53% versus a Technology sector median of 2.02% (73.8% below).

Valuation history

YearSnapshot dateMarket capP/EDividend yieldAnnual dividend/share
20262026-10-18TWD 91.16B121.70.5%2.62

Dividend history

Latest trailing dividend snapshot: annual dividend/share 2.62 TWD, yield 0.5%.

About Visual Photonics Epitaxy Co., Ltd.

Visual Photonics Epitaxy Co., Ltd. engages in the research and development, manufacture, and sale of microelectronic products in Taiwan, the United States, and internationally. The company offers microelectronics epi wafers, including gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), low turn-on voltage HBT, high voltage HBT, InP HBT and HEMT, GaAs pseudomorphic high electron mobility transistor (PHEMT) and BiHEMT, and GaN epi wafers.

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Frequently asked questions

What is Visual Photonics Epitaxy Co., Ltd.'s market cap?

Visual Photonics Epitaxy Co., Ltd.'s market capitalization is TWD 91.16B.

What is Visual Photonics Epitaxy Co., Ltd.'s P/E ratio?

Visual Photonics Epitaxy Co., Ltd.'s price-to-earnings (P/E) ratio is 121.7.

Does Visual Photonics Epitaxy Co., Ltd. pay a dividend?

Visual Photonics Epitaxy Co., Ltd. has a dividend yield of 0.5%.

What does Visual Photonics Epitaxy Co., Ltd. do?

Visual Photonics Epitaxy Co., Ltd. engages in the research and development, manufacture, and sale of microelectronic products in Taiwan, the United States, and internationally. The company offers microelectronics epi wafers, including gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), low turn-on voltage HBT, high voltage HBT, InP HBT and HEMT, GaAs pseudomorphic high electron mobility transistor (PHEMT) and BiHEMT, and GaN epi wafers.